VEC2102 AC 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-30V |
| 集电极连续输出电流IC
Collector Current(IC) |
-3A |
| Q1基极输入电阻R1
Input Resistance(R1) |
380MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
200~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-160mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
1300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Epitaxial Planar Silicon Transistor ? Composite type with 2 PNP transistors contained in a single package, facilitating high-density mounting. ? The VEC2102 consists of two chips which are equivalent to the CPH3109 encapsulated in a package. ? Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.75mm). Applications ? Relay drivers, lamp drivers, motor drivers, flash. ? DC / DC Converter Applications |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP平面外延硅晶体管 ?复合型，在单一封装中包含2个PNP晶体管，促进高密度安装。 ?VEC2102由两个芯片是封装在一个包中的CPH3109。 ?超小封装允许应用套小而纤细（安装高度：高度仅0.75mm）。 应用 ?继电器驱动器，灯驱动器，电机驱动器，闪光灯。 ?DC / DC转换器应用 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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