XP0555400L(XP5540) HE 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V |
集电极连续输出电流IC
Collector Current(IC) |
100mA |
截止频率fT
Transtion Frequency(fT) |
450MHz |
直流电流增益hFE
DC Current Gain(hFE) |
90~200 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
170mV |
耗散功率Pc
Power Dissipation |
150mW |
Description & Applications |
Features ? Silicon NPN epitaxial planar type ? Two elements incorporated into one package ? Low collector-emitter saturation voltage VCE(sat) Applications ? For high-speed switching |
描述与应用 |
特点 ?NPN硅外延平面型 ?两个要素纳入一包装 ?低集电极 - 发射极饱和电压VCE(SAT) 应用 ?对于高速切换 |
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