ZXT13N50DE6TA N50D 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
190V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
70V |
| 集电极连续输出电流IC
Collector Current(IC) |
10mA |
| 截止频率fT
Transtion Frequency(fT) |
115MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
450 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
175mV/0.175V |
| 耗散功率Pc
Power Dissipation |
1.7W |
| Description & Applications |
? 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ? Extremely Low Equivalent On Resistance ? Extremely Low Saturation Voltage ? hFEcharacterised up to 10A ? IC=4A Continuous Collector Current ? SOT23-6 package |
| 描述与应用 |
?50V NPN硅低饱和开关晶体管 ?极低的等效导通电阻 ?极低的饱和电压 ?hFEcharacterised的高达10A ?IC= 4A的连续集电极电流 |
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