AAT7551IJS-T1 KDG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
-2.7A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
0.14?@ VGS = -2.5V, ID = -2.0A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.6V |
| 耗散功率Pd
Power Dissipation |
1.2W |
| Description & Applications |
P-Channel Power MOSFET General Description The AAT7551 is dual low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7551 is designed for use as a load switch in battery powered applications and protection in battery packs. Applications ? Battery Packs ? Battery-powered portable equipment ? Cellular and Cordless Telephones |
| 描述与应用 |
P沟道功率MOSFET 概述 AAT7551双低阈值20V，双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT7551是专为使用作为负载开关 在电池组中电池供电的应用和保护。 应用 ?电池组 ?电池供电的便携式设备 ?蜂窝和无绳电话 |
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