BC856BM3T5G 3B 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
?80V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?65V |
| 集电极连续输出电流IC
Collector Current(IC) |
?100mA/-0.1A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
220~475 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc
PoWer Dissipation |
265mW/0.265W |
| Description & Applications |
General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT?723 which is designed for low power surface mount applications. ? This is a Pb?Free Device |
| 描述与应用 |
通用晶体管 PNP硅 这种晶体管是专为通用放大器应用。它被安置在SOT-723是专为低功率表面贴装应用。 ?这是一个Pb-Free设备 |
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