BC81725MTF 8FB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
45V |
| 集电极连续输出电流IC
Collector Current(IC) |
800mA/0.8A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
700mV/0.7V |
| 耗散功率Pc
Power Dissipation |
310mW/0.31W |
| Description & Applications |
NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · Suitable for AF-Driver stages and low power output stages · Complement to BC807/BC808 |
| 描述与应用 |
NPN外延硅晶体管 开关和放大器应用 ·适用于AF驱动阶段和低功率输出级 ·补充BC807/BC808 |
| 技术文档PDF下载 |
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