2SK663-R 2BR 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
55v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-55v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
2~6.5ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Silicon N-Channel Junction FET ?For low-frequency amplification ?For switching ?Low noise-figure (NF) ?High gate to drain voltage VGDO Features lLow noise-figure (NF) lHigh gate to drain voltage VGDO lS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 |
?硅N沟道结型场效应管 ?对于低频放大 ?对于开关 ?低噪声系数（NF） ?高门漏极电压VGDO的 特点 LLOW噪声系数（NF） lHigh栅漏电压VGDO LS-迷你型包装，通过自动插入磁带/盒包装 |
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