2SA2161GOLSO 2U 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-12V |
| 集电极连续输出电流IC
Collector Current(IC) |
?500mA/-0.5A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
270~680 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-250mV/-0.25V |
| 耗散功率Pc
PoWer Dissipation |
125mW/0.125W |
| Description & Applications |
PNP Silicon epitaxial planar type For general amplification Complementary to 2SC6037G Features ? Low collector-emitter saturation voltage VCE(sat) ? SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
PNP硅外延平面型 对于一般放大 互补型2SC6037G 特点 ?低集电极 - 发射极饱和电压VCE（饱和） ?SS-迷你型包装，让精简的设备和通过自动插入磁带包装 |
| 技术文档PDF下载 |
在线阅读  |
