EMC3DXV5T5 U3K 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V/50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
集电极连续输出电流IC
Collector Current(IC) |
-100mA/100mA |
Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
60 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
500mW/0.5W |
Description & Applications |
Features ?Dual Common Base?Collector Bias Resistor Transistors ?NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network ?Simplifies Circuit Design ?Reduces Board Space ?Reduces Component Count ?These are Pb?Free Devices |
描述与应用 |
特点 ?双共基极 - 集电极偏置电阻晶体管 ?NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 ?简化电路设计吗? ?缩小板级空间 ?减少元件数量 ?这些都是Pb-Free设备 |
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