KTK211GR KG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
18v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-18v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
1~15ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.4~-4v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Silicon N-Channel Junction FET |
| 描述与应用 |
?硅N沟道结型场效应管 |
| 技术文档PDF下载 |
在线阅读  |
