SUT487JPF XX 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
80MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
120~400 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-300mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
150mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? Epitaxial planar type PNP silicon transistor ? Two 2SA1980 chips in SOT-363 package |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?外延平面型PNP硅晶体管 ?两个2SA1980 SOT-363封装的芯片 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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