RT3XBBM XBB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V/-40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V/-20V |
| 集电极连续输出电流IC
Collector Current(IC) |
400mA/-400mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
|
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
820~2500 |
| 截止频率fT
Transtion Frequency(fT) |
35MHz |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features ?Composite Transistor With Resistor For Muting Application Silicon NPN Epitaxial Type ?Built-in bias resistor ( R1=10 KΩ/Ohm) ?Mini package for easy mounting Applications ?muting circuit、switching circuit |
| 描述与应用 |
特点 ?复合静音应用硅NPN外延型晶体管，电阻 ?内置偏置电阻（R1= 10KΩ/Ohm） ?易于安装的小型封装 应用 ?静音电路，开关电路 |
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