RT3P11M P11 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-10V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
150MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
50 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-100mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
150mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ?Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ?Silicon epitaxial type ?Each transistor elements are independent. ?Mini package for easy mounting APPLICATION ?Inverted circuit, switching circuit, interface circuit, driver circuit |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?复合开关应用硅外延型晶体管，电阻 ?硅外延型 ?每个晶体管的元素是独立的。 ?易于安装的小型封装 应用 ?反向电路，开关电路，接口电路，驱动电路 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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