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BBY66-02V H 的参数 |
| 反向电压VR
Reverse Voltage |
12V |
| 电容值C
Diode capacitance |
68.7pF |
| @反向电压VR
@Reverse Voltage |
1V |
| 电容值C
Diode capacitance |
12.7pF |
| @反向电压VR
@Reverse Voltage |
4.5V |
| 电容比
Capacitance ratio |
5.41 |
| Description & Applications |
Silicon Tuning Diode High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs Very low capacitance spread |
| 描述与应用 |
硅调谐二极管 高电容率 高Q超突变调谐二极管 低串联电阻 专为低调谐电压VCO的操作在移动通信设备 用于控制元件如温度补偿晶体振荡器和压控晶体振荡器 非常低的电容扩散 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| BBY66-02V |
H |
INFINEON |
05+ |
SOD-523/SC-79/ESC/0603 |
0 |
二极管Diodes-变容二极管Variable Capacitance Diodes (Varicaps, Varactors)-单管Single |
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