MT6L75CT 52 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
10V/13V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
5V/6V |
| 集电极连续输出电流IC
Collector Current(IC) |
25mA/80mA |
| 截止频率fT
Transtion Frequency(fT) |
12000MHz/8500MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~140/110~160 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
100mW |
| Description & Applications |
Features ? TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE ? It exsels in the buffer and oscillation use. ? Two devices are built in to the fine pich small mold package (6pins):fs6 ? VHF~UHF Band Low-Noise Amplifier Applications |
| 描述与应用 |
特点 ?东芝晶体管的硅，硅锗NPN外延平面型 ?缓冲和振荡使用exsels。 ?两个设备都建在PICH优良的小型模具包（6pins咨询）：FS6 ?VHF?UHF频段低噪声放大器应用 |
| 技术文档PDF下载 |
在线阅读  |
