RN1108CT L7 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
集电极连续输出电流IC
Collector Current(IC) |
50mA |
基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
0.468 |
直流电流增益hFE
DC Current Gain(hFE) |
120 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
0.05W/50mW |
Description & Applications |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications ?Incorporating a bias resistor into a transistor reduces the number of parts, which enable the manufacture of ever more compact equipment and saves assembly cost. ?Complementary to RN2107CT to RN2109CT |
描述与应用 |
开关应用 逆变电路应用 接口电路的应用 驱动器电路应用 ?结合成一个晶体管的偏置电阻器的数量减少 部分,这使制造的更加紧凑的 设备和节省组装成本。 ?互补RN2107CT的到RN2109CT |
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