TF202-5-TL-H E5 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.21~0.35ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2~-1.2v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
N-channel Junction FET Features ? Especially suited for use in electret condenser microphone. ? Ultrasmall package permitting TF202 applied sets to be made small and slim. ? Excellent voltage characteristics. ? Excellent transient characteristics. ? Adoption of FBET process. |
| 描述与应用 |
N沟道结型场效应管 特点 ?尤其适用于使用电容式驻极体 麦克风。 ?超小包装允许TF202 应用设置作出小巧玲珑。 ?优秀的电压特性。 ?出色的瞬态特性。 ?通过过程FBET。 |
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