SGF9C-TL-E M 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
6V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-5V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
30mA-70mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.5V -- -5.0V |
| 耗散功率Pd
Power Dissipation |
130mW/0.13W |
| Description & Applications |
N-Channel GaAs MES FET For C to X-band Local Oscillator and Amplifier Mold package-owing to the cross-mold technology this product can maintain the same performance as the ceramic package The chip surface is covered with the highly reliable protection film Automatic surface mounting is available |
| 描述与应用 |
N沟道砷化镓MES 场效应管 用于C X-波段本地振荡器和放大器 模具包装，交叉模具技术 由于陶瓷封装，这种产品能保持相同的性能 该芯片表面覆盖高度可靠的保护膜 自动表面安装 |
| 技术文档PDF下载 |
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