MA3S78100L M1L 的参数 |
| 反向电压Vr
Reverse Voltage |
30V |
| 平均整流电流Io
AVerage Rectified Current |
30ma |
| 最大正向压降VF
Forward Voltage(Vf) |
400mV/0.4V |
| 最大耗散功率Pd
Power dissipation |
|
| Description & Applications |
? Schottky Barrier Diodes (SBD) ? Silicon epitaxial planar type ? For the switching circuit ? 1608 type diode contained in the (SS-mini) package ? Surface mounting, allowing high-density mounting ? Optimum for high-frequency rectification because of its short reverse recovery time (trr) ? Low VF (forward rise voltage), with high rectification efficiency |
| 描述与应用 |
?肖特基势垒二极管（SBD） ?硅外延平面型 ?开关电路 ?高频整流，快速反向恢复时间短（TRR） ?低VF（正向电压上升），整流效率高 |
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