2SK3653B CE 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.09~0.18ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.37~-1v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM FEATURES ? Low noise: ?108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k?) ? Especially suitable for audio and telephone ? Super thin thickness package: t = 0.37 mm TYP. |
| 描述与应用 |
?硅N沟道结型场效应管 驻极体电容式麦克风 - 非常适于微型麦克风CSP封装的1.0×0.6×0.38亿吨 ?优秀的降低电压特性 ·出色的瞬态响应 |
| 技术文档PDF下载 |
在线阅读  |
