FFB5551 P1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
180V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
160V |
| 集电极连续输出电流IC
Collector Current(IC) |
200mA |
| 截止频率fT
Transtion Frequency(fT) |
300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
250 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? Dual-Chip NPN General Purpose Amplifier ? This device is deisgned for general purpose high voltage amplifiers. ? E1 is Pin 1. |
| 描述与应用 |
特点 ?双芯片NPN通用放大器 ?这的设备deisgned通用高电压放大器。 ?E1是引脚1 |
| 技术文档PDF下载 |
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