PBSS5330X P1S 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?30V |
集电极连续输出电流IC
Collector Current(IC) |
-3A |
截止频率fT
Transtion Frequency(fT) |
100MHz |
直流电流增益hFE
DC Current Gain(hFE) |
175~450 |
管压降VCE(sat)
Collector-Emitter SaturationVoltage |
-320mV/-0.32V |
耗散功率Pc
PoWer Dissipation |
550mW/0.55W |
Description & Applications |
30 V low VCE(sat) PNP transistor FEATURES ? SOT89 (SC-62) package ? Low collector-emitter saturation voltage VCEsat ? High collector current capability: IC and ICM ? Higher efficiency leading to less heat generation ? Reduced printed-circuit board requirements. APPLICATIONS ? Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. ? Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). |
描述与应用 |
30伏的低VCE(sat)的PNP晶体管 特点 ?SOT89(SC-62)封装 ?低集电极 - 发射极饱和电压VCE监测 ?高集电极电流能力:IC和ICM ?更高的效率,导致产生的热量少 ?减少印刷电路板的要求。 应用 ?电源管理 - DC/ DC转换器 - 电源线开关 - 电池充电器 - LCD背光。 ?外设驱动程序 - 驱动器,在低电源电压应用(如灯和LED) - 感性负载驱动器(如继电器,蜂鸣器和电机)。 |
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