EMH2412-TL-H 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
24V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
6A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
13?@ VGS = 2.5V, ID = 1mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.8~1.5V |
| 耗散功率Pd
Power Dissipation |
1.3W |
| Description & Applications |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ? Low ON-resistance. ? Halogen free ? 2.5V drive ? Common drain type |
| 描述与应用 |
N-沟道硅MOSFET 通用开关设备应用 特点 ?低导通电阻。 ?无卤 ?2.5V驱动 ?共漏极类型 |
| 技术文档PDF下载 |
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