MA3J745EGL M3D 的参数 |
| 反向电压Vr
Reverse Voltage |
30V |
| 平均整流电流Io
AVerage Rectified Current |
200mA/0.2A |
| 最大正向压降VF
Forward Voltage(Vf) |
1V |
| 最大耗散功率Pd
Power dissipation |
|
| Description & Applications |
? Schottky Barrier Diodes (SBD) ? Silicon epitaxial planar type ? For switching ? Two elements are contained in one package, allowing highdensity mounting ? Low forward voltage VF , optimum for low voltage rectification ? Optimum for high frequency rectification because of its short reverse recovery time (trr) ? S-Mini type 3-pin package ? Common Cathode Schottky Barrier Diodes . |
| 描述与应用 |
?肖特基势垒二极管（SBD） ?硅外延平面型 ?开关 ?低正向电压VF，最适用于低电压整改 ?高频率整流，快速反向恢复。 ?共阴极肖特基二极管。 |
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