BFT46 M3W 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.2~1.5ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
|
| 耗散功率Pd
Power Dissipation |
250mW/0.25W |
| Description & Applications |
?N-channel silicon field-effect transistors DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. |
| 描述与应用 |
?N沟道硅场效应晶体管说明 对称n沟道硅 外延结型场效应 晶体管在一个超小型的塑料 信封。晶体管的目的 低级别通用 放大器厚薄膜 电路。 |
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