BFS483 RH 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
65mA |
| 截止频率fT
Transtion Frequency(fT) |
8000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
450mW |
| Description & Applications |
Features ? NPN Silicon RF Transistor ? For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA ? fT = 8 GHz F = 1.2 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package |
| 描述与应用 |
特点 ?NPN硅RF晶体管 ?对于集电极电流从2 mA至28 mA的低噪声，高增益宽带放大器 ?FT=8 GHz的F =1.2分贝在900 MHz ?两（电流）的内部孤立在一个晶体管包装 |
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