DP030S P01 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-12V |
| 集电极连续输出电流IC
Collector Current(IC) |
?300mA/-0.3A |
| 截止频率fT
Transtion Frequency(fT) |
350MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~450 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP Silicon Transistor Features ? Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) ? Suitable for low voltage large current drivers ? Excellent hFE Linearity ? Complementary pair with DN030S ? Switching Application |
| 描述与应用 |
PNP硅晶体管 特点 ?极低的集电极 - 发射极饱和电压（VCE（SAT）=-0.15V典型值@ IC/ IB=-100mA/-10mA） ?适用于低电压大电流驱动器 ?优秀的HFE线性 ?DN030S互补配对 ?开关应用 |
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