KTX111T BY 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
35V/-35V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
30V/-30V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/-500mA |
| 截止频率fT
Transtion Frequency(fT) |
300MHz/200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~240 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/-100mV |
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ?EPITAXIAL PLANAR NPN/PNP TRANSISTOR ?Including two devices in TS6.(Thin Super Mini type with 6 pin) ?Simplify circuit design. ?Reduce a quantity of parts and manufacturing process. ?GENERAL PURPOSE APPLICATION. |
| 描述与应用 |
特点 ?外延平面NPN/ PNP晶体管 ?包括两个设备（薄超级迷你型6针）TS6。 ?简化电路设计。 ?减少了部件数量和制造工艺。 ?通用应用。 |
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