HN1C07F 46 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA |
| 截止频率fT
Transtion Frequency(fT) |
300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~240 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) ? Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA ? Audio Frequency Small Power Amplifier Applications Driver Stage AmplifierApplications ,Switching applications |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延型（PCT工艺） ?优秀的现水平增益（HFE）线性度：HFE（2）=25（分钟）VCE=6V IC=400毫安 ?小功率音频放大器应用驱动阶段放大器应用，开关应用 |
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