RN1544-A 44A 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
300mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
|
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
200~700 |
| 截止频率fT
Transtion Frequency(fT) |
30MHz |
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) ? For use in Muting and Switching Applications ? Emitter-base voltage is high: VEBO = 25 V (max) ? Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延型（PCT进程）（偏置电阻内置晶体管）用于静音和开关应用 ?发射极基极电压高：VEBO=25 V（最大值） ?将偏置电阻晶体管，减少了部件数量。减少零件数，使制造更加紧凑的设备和节省组装成本 |
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