3SK284 U1 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-6V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-4V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
4mA-16mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.5V -- -1.5V |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
TOSHIBA FIELD EFFECT TRANSISTER .GaAs N-channel Dual Gate MES FET .Applications: TV TUNER,UHF RF AMPLIFIER APPLICATIONS. |
| 描述与应用 |
东芝场效应型晶体管. 砷化镓N沟道双栅MES FET. 应用: 电视调谐器，超高频 RF放大器. |
| 技术文档PDF下载 |
在线阅读  |
