CPH5703 PC 的参数 |
三极管BJT类型
TYPE |
NPN |
三极管BJT集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
三极管BJT集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
三极管BJT集电极连续输出电流IC
Collector Current(IC) |
3A |
三极管BJT截止频率fT
Transtion Frequency(fT) |
380MHz |
三极管BJT直流电流增益hFE
DC Current Gain(hFE) |
1A |
三极管BJT管压降VCE(sat)
Collector-Emitter Saturation Voltage |
80~120mV |
二极管DIODE类型
TYPE |
肖特基-单管 SBD-Single |
二极管DIODE反向电压VR
Reverse Voltage |
50V |
二极管DIODE正向整流电流Io
Rectified Current |
500mA |
二极管DIODE正向电压降VF
Forward Voltage(Vf) |
550mV |
耗散功率Pc
Power Dissipation |
900mW |
Description & Applications |
Features ? TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode ? DC/DC Converter Applications ? Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. ? The CPH5703 consists of two chips encapsulated in a package which are equivalent to the CPH3205 and the SB05-05CP, respectively ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). |
描述与应用 |
特点 ?TR:NPN平面外延硅晶体管 ?SBD:肖特基二极管 ?DC / DC转换器应用 ?复合型与NPN晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 ?CPH5703由两个芯片封装在一个包相当于CPH3205和SB05-05CP,分别 ?允许应用套小型和超薄(0.9毫米)的超小尺寸封装。 |
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