FDC5612 562 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
4.3A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
64m?@ VGS = 6V, ID =4A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
2~4V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
60V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency Applications ? DC/DC converte Features ? High performance trench technology for extremely low RDS(ON) ? Low gate charg ? Fast switching speed |
| 描述与应用 |
60V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。 这些MOSFET具有更快的开关和更低的栅极电荷比其他的MOSFET相媲美的RDS（ON）规格。 其结果是一个MOSFET，很容易和更安全的驾驶（即使在非常高的频率），和DC / DC电源设计中具有较高的整体效率 应用 ?DC/ DC转换器具 特点 ?高性能沟道技术极低的RDS（ON） ?低栅极临时代办 ?开关速度快 |
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