2N6509G 2N6509G 的参数 |
| 反向重复峰值电压VRRM/断态重复峰值电压VDRM
Repetitive peak reverse voltage/Repetitive peak off-state voltage |
800V |
| 通态平均电流IT(AV)
Average on-state current |
16A |
| 通态最大电流IT(RMS)
RMS on-state current |
25A |
| 栅极触发电压VGT
Gate trigger voltage |
1V |
| 栅极触发电流IGT
Gate trigger current |
9mA |
| 保持电流IH
Holding current |
18mA |
| 峰值通态电压VTM
On-state voltage |
1.8V |
| 重复峰值断态电流IDRM
Repetitive peak off-state current |
10μA |
| 浪涌电流ITSM(50Hz、60Hz)
Current - Non Rep. Surge 50, 60Hz (Itsm) |
250A |
| Description & Applications |
Silicon Controlled Rectifiers Reverse Blocking Thyristors Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Pb?Free Packages are Available |
| 描述与应用 |
可控硅整流器反向阻断晶闸管 玻璃钝化路口中心门消防大 参数一致性和稳定性 体积小，坚固耐用，特莫瓦特构建的低热电 电阻，高散热性和耐用性 阻断电压800伏特 300A浪涌电流能力 提供无铅封装 |
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